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Theoretical Optics & Photonics
Institut für Physik - Humboldt-Universität zu Berlin and Max-Born-Institut
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Growth and characterization of SiGeSn quantum well photodiodes
Growth and characterization of SiGeSn quantum well photodiodes
Fischer, I, Wendav, T, Augel, L, Jitpakdeebodin, S, Oliveira, F, Benedetti, A, Stefanov, S, Chiussi, S, Capellini, G, Busch, K, and Schulze, J (2015)
Optics Express 23:25048
Summary (expand/hide)
We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations. © 2015 Optical Society of America
osapublishing.org
Kurt Busch
;
Torsten Wendav
;
Group IV Photonics
Tags:
PIN diodes
;
semi-conductors
;
electroluminescence
;
quantum wells
;
optical responsivity
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Theoretical Optics & Photonics
Department of Physics - HU zu Berlin
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