Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

E.G. Rolseth, A. Blech, I.A. Fischer, Y. Hashad, R. Koerner, K. Kostecki, A. Kruglov, V.S. Senthil Srinivasan, M. Weiser, T. Wendav, K. Busch, and J. Schulze (2017)
IEEE Conference on Information and Communication Technology, Electronics and Microelectronics (MIPRO) 2017:57