Compositonal dependence of the band-gap of Ge(1-x-y) Si(x) Sn(y) alloys
Wendav, T, Fischer, IA, Montanari, M, Zoellner, MH, Klesse, W, Capellini, G, von_den_Driesch, N, Oehme, M, Buca, D, Busch, K, and Schulze, J (2016)
Applied Physics Letters 108:242104
The group-IV semiconductor alloy Ge(1−x−y) Si(x) Sn(y) has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we...